| PART |
Description |
Maker |
| MC145017 |
Ionization Smoke Detector(电离烟雾检测器)
Low-Power CMOS Ionlzatlon Smoke Detector IC wite Temporal Pattern Horn Driver
MC145017 Ionization Smoke Detector IC with Temporal Pattern Horn Driver
|
Motorola, Inc.
|
| RE46C126 |
CMOS Ionization Smoke Detector ASIC with Interconnect
|
RANDE
R & E International, Inc.
|
| RE46C129 |
CMOS Ionization Smoke Detector ASIC with Interconnect
|
Microchip Technology
|
| RE46C128 |
CMOS Ionization Smoke Detector ASIC with Interconnect
|
Microchip Technology
|
| RE46C122 |
CMOS Ionization Smoke Detector ASIC with Interconnect and Timer Mode
|
R & E International, Inc.
|
| RE46C127 |
CMOS Ionization Smoke Detector ASIC with Interconnect and Timer Mode
|
R & E International, Inc.
|
| MX7501 MX7503 MX7502 MX7501JQ MX7501JN MX7503JN 15 |
8-Channel, Low-Power, Monolithic, CMOS Multiplexer
From old datasheet system
Low -Power Monolithic CMOS Analog Multiplexers
Low-Power, Monolithic, CMOS Analog Multiplexers
Low -Power / Monolithic / CMOS Analog Multiplexers
Low -Power, Monolithic, CMOS Analog Multiplexers 8-CHANNEL, SGL ENDED MULTIPLEXER, PDIP16
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maixm
Maxim Integrated Products, Inc.
|
| K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM
55ns; 128 x 8-bit low power CMOS static RAM
70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| GLT6100L08LL-55TC GLT6100L08LL-70TC GLT6100L08LL-8 |
55ns; Ultra low power 64K x 16 CMOS SRAM
70ns; Ultra low power 64K x 16 CMOS SRAM
85ns; Ultra low power 64K x 16 CMOS SRAM
100ns; Ultra low power 64K x 16 CMOS SRAM
|
G-LINK Technology
|
| GLT6100L08LL-100ST GLT6100L08LL-100TS GLT6100L08LL |
100ns; Ultra low power 128k x 8 CMOS SRAM
55ns; Ultra low power 128k x 8 CMOS SRAM
70ns; Ultra low power 128k x 8 CMOS SRAM
85ns; Ultra low power 128k x 8 CMOS SRAM
|
G-LINK Technology
|
| N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM
2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
| STC62WV1024 STC62WV1024DC STC62WV1024DC-55 STC62WV |
VERY LOW POWER VOLTAGE CMOS SRAM
DIODE,ZENER 12. V 1. W SP-55 *1N4742A 非常低的电压CMOS的SRAM
VERY LOW POWER VOLTAGE CMOS SRAM 非常低的电压CMOSSRAM
VERY LOW POWER VOLTAGE CMOS SRAM 非常低的电压CMOS的SRAM
|
Electronic Theatre Controls, Inc.
ETC[ETC]
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